Technology Development Intern, RF GaN (Summer 2027)
Core
Develop new process flows and devices in RF GaN technologies for a 200mm manufacturing fabricator, focusing on GaN HEMT development for RF applications.
Role type
Technology Development Intern (Semiconductor Process & Device Engineering)
Builds
New process modules, integration flows, and RF GaN devices for high-growth markets
Domain
Semiconductor manufacturing, RF electronics, Wide Bandgap (GaN) materials
Required skills
Semiconductor device physics, Semiconductor processing (wide band gap/III-N), GaN HEMT characterization (DC, s-parameter, loadpull, pulsed I-V), Process integration, Electrical measurement and analysis, TCAD simulation
Preferred skills
Leadership experience, Project management, Modern device physics (FET, BJT, HEMT), WBG device physics (dispersion, traps, self-heating), Semiconductor processing (GaN, CMOS, SiGe)
Technologies
GaN HEMT, RF test equipment, TCAD simulation tools, s-parameter analyzers, Loadpull systems
Responsibilities
Define and design process modules and integration for GaN HEMT development; Organize, run, and analyze experiments to meet performance and yield objectives; Collaborate with Fab9 engineering teams on testing, failure analysis, and reliability; Ensure process controls and electrical tests are available for new devices; Support technology development qualification milestones from conception to manufacturing installation.
Seniority
Intern, entry-level talent pipeline
